Ould-Abbas, Amaria and Bouchaour, Mama and Sari, Nasr-Eddine Chabane (2012) Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method. Open Journal of Physical Chemistry, 02 (01). pp. 1-6. ISSN 2162-1969
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Abstract
In this work, we are interesting in the measurement of thermal conductivity (on the surface and in-depth) of Porous silicon by the micro-Raman spectroscopy. This direct method (micro-Raman spectroscopy) enabled us to develop a systematic means of investigation of the morphology and the thermal conductivity of Porous silicon oxidized or no. The thermal conductivity is studied according to the parameters of anodization and fraction of silicon oxidized. Thermal transport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors.
Item Type: | Article |
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Subjects: | STM Academic > Chemical Science |
Depositing User: | Unnamed user with email support@stmacademic.com |
Date Deposited: | 01 Jun 2023 09:35 |
Last Modified: | 30 Jan 2024 06:58 |
URI: | http://article.researchpromo.com/id/eprint/937 |